A SMALL-SIGNAL HIGH FREQUENCY EQUIVALENT CIRCUIT FOR THE FIELD-EFFECT TRANSISTOR
Date
1965-05
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ORCID
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Degree Level
Masters
Abstract
The field effect transistor is considered as an active, distributed non-uniform transmission line and a differential equation fore the small-signal a.c. case is derived. The short-circuit admittance parameters of the device are determined from the solution of differential equation. A high frequency equivalent circuit for the intrinsic device is then obtained from the first-order approximation of the analysis and the expressions for the elements of this circuit are derived for both the saturated and the non-saturated conditions. The normalized values of these elements are computed as functions of the gate and drain bias voltages and the results of these computations are presented graphically.
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Degree
Master of Science (M.Sc.)
Department
Electrical and Computer Engineering
Program
Electrical Engineering