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dc.creatorYang, Junyi
dc.date.accessioned2016-07-07T20:36:25Z
dc.date.available2017-11-27T16:31:59Z
dc.date.created2016-08
dc.date.issued2016-07-07
dc.date.submittedAugust 2016
dc.identifier.urihttp://hdl.handle.net/10388/7331
dc.description.abstractAmorphous selenium and its alloy are important materials for flat panel digital X-ray detectors. The performance of the X-ray detector is directly related to the carrier mobility and carrier-trapping lifetime of amorphous selenium and its alloy. An experiment was conducted to examine the dose rate effects on the carrier-trapping lifetime reduction of amorphous selenium alloy due to X-ray irradiation. In addition, an experiment was conducted to investigate the temperature effects on X-ray induced carrier-trapping lifetime decrease and relaxation process. X-ray induced capacitance changes have been investigated as well. The interrupted field time of flight (IFTOF) techniques are used in order to acquire the carrier-trapping lifetime. Several amorphous selenium alloy films are irradiated under X-ray. The composition of films are a-Se: 0.3% As: 5ppm Cl and the thickness of the films are about 150 μm. Different dose rates, which range from 0.2 Gy/s up to 2 Gy/s, are applied during the irradiation. The experiments are done for both electrons and holes. The dose rate difference does not result in a significant change in the X-ray induced carrier-trapping lifetime decrease. The same set of samples is studied under three different temperatures, 10 ℃, 23.5 ℃ and 35.5 ℃. The X-ray induced hole-trapping lifetime changes at different temperatures are investigated. After irradiation, the hole-trapping lifetime begins to recovery gradually. The temperature during the relaxation process remains unchanged. The change of hole-trapping lifetime is measured by IFTOF measurement. At higher temperature, upon receiving a certain amount of X-ray dose, the hole-trapping lifetime decreases more than it at lower temperature; however, it also recoveries more quickly at higher temperature. The relaxation process at different temperature also gives activation energy for holes. The X-ray irradiation does not result in any capacitance changes for a-Se films.
dc.format.mimetypeapplication/pdf
dc.subjectAmorphous Selenium
dc.subjectX-ray
dc.titleX-ray Induced Changes in Electronic Properties of Stabilized Amorphous Selenium Based Photoconductors
dc.typeThesis
dc.date.updated2016-07-07T20:36:25Z
thesis.degree.departmentBiomedical Engineering
thesis.degree.disciplineBiomedical Engineering
thesis.degree.grantorUniversity of Saskatchewan
thesis.degree.levelMasters
thesis.degree.nameMaster of Science (M.Sc.)
dc.type.materialtext
dc.contributor.committeeMemberKasap, Safa O
dc.contributor.committeeMemberBradley, Michael P
dc.contributor.committeeMemberBui, Francis M
dc.contributor.committeeMemberChen, Li
dc.contributor.committeeMemberYang, Qiaoqin
local.embargo.terms2017-07-07


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