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dc.contributor.advisorChen, L.en_US
dc.creatorDing, Yanen_US
dc.date.accessioned2010-05-31T16:45:33Zen_US
dc.date.accessioned2013-01-04T04:34:20Z
dc.date.available2011-06-14T08:00:00Zen_US
dc.date.available2013-01-04T04:34:20Z
dc.date.created2010-05en_US
dc.date.issued2010-05-14en_US
dc.date.submittedMay 2010en_US
dc.identifier.urihttp://hdl.handle.net/10388/etd-05312010-164533en_US
dc.description.abstractIntegrated Circuits in space suffer from reliability problems due to the radiative surroundings. High energy particles can ionize the semiconductor and lead to single event effects. For digital systems, the transients can upset the logic values in the storage cells which are called single event upsets, or in the combinational logic circuits which are called single event transients. While for analog systems, the transient will introduce noises and change the operating point. The influence becomes more notable in advanced technologies, where devices are more susceptive to the perturbations due to the compact layout. Recently radiation-hardened-by-design has become an effective approach compared to that of modifying semiconductor processes. Hence it is used in this thesis project. Firstly, three elaborately designed radiation-tolerant registers are implemented. Then, two built-in testing circuits are introduced. They are used to detect and count the single event upsets in the registers during high-energy particle tests. The third part is the pulse width measurement circuit, which is designed for measuring the single event transient pulse width in combinational logic circuits. According to the simulations, transient pulse width ranging from 90.6ps to 2.53ns can be effectively measured. Finally, two frequently used cross-coupled LC tank voltage-controlled oscillators are studied to compare their radiation tolerances. Simulation results show that the direct power connection and transistors working in the deep saturation mode have positive influence toward the radiation tolerance. All of the circuit designs, simulations and analyses are based on STMicroelectronics CMOS 90 nm 7M2T General Process.en_US
dc.language.isoen_USen_US
dc.subjectsingle event effecten_US
dc.subjectradiation tolerenten_US
dc.subjectsingle event transienten_US
dc.subjectsingle event upseten_US
dc.titleStudy of radiation-tolerant integrated circuits for space applicationsen_US
thesis.degree.departmentElectrical Engineeringen_US
thesis.degree.disciplineElectrical Engineeringen_US
thesis.degree.grantorUniversity of Saskatchewanen_US
thesis.degree.levelMastersen_US
thesis.degree.nameMaster of Science (M.Sc.)en_US
dc.type.materialtexten_US
dc.type.genreThesisen_US
dc.contributor.committeeMemberDinh, A.en_US
dc.contributor.committeeMemberKo, Seok-Bumen_US
dc.contributor.committeeMemberWu, F.en_US


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