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dc.contributor.advisorKlymyshyn, David M.en_US
dc.contributor.advisorDinh, Anh vanen_US
dc.creatorFang, Linuoen_US
dc.date.accessioned2007-07-03T15:32:58Zen_US
dc.date.accessioned2013-01-04T04:41:29Z
dc.date.available2007-07-04T08:00:00Zen_US
dc.date.available2013-01-04T04:41:29Z
dc.date.created2007-07en_US
dc.date.issued2007-07-04en_US
dc.date.submittedJuly 2007en_US
dc.identifier.urihttp://hdl.handle.net/10388/etd-07032007-153258en_US
dc.description.abstractModern communication systems require high performance radio frequency (RF) and microwave circuits and devices. This is becoming increasingly challenging to realize in the content of cost/size constraints. Integrated circuits (ICs) satisfy the cost/size requirement, but performance is often sacri¯ced. For instance, high quality factor (Q factor) passive components are difficult to achieve in standard silicon-based IC processes.In recent years, microelectromechanical systems (MEMS) devices have been receiving increasing attention as a possible replacement for various on-chip passive elements, offering potential improvement in performance while maintaining high levels of integration. Variable capacitors (varactor) are common elements used in various applications. One of the MEMS variable capacitors that has been recently developed is built using deep X-ray lithography (as part of the LIGA process). This type of capacitor exhibits high quality factor at microwave frequencies.The complementary metal oxide semiconductor (CMOS) technology dominates the silicon IC process. CMOS becomes increasingly popular for RF applications due to its advantages in level of integration, cost and power consumption. This research demonstrates a CMOS voltage-controlled oscillator (VCO) design which is used to investigate methods, advantages and problems in integrating LIGA-MEMS devices to CMOS RF circuits, and to evaluate the performance of the LIGA-MEMS variable capacitor in comparison with the conventional on-chip CMOS varactor. The VCO was designed and fabricated using TSMC 0.18 micron CMOS technology. The core of the VCO, including transistors, resistors, and on-chip inductors was designed to connect to either an on-chip CMOS varactor or an off-chip LIGA-MEMS capacitor to oscillate between 2.6 GHz and 2.7 GHz. Oscillator phase noise analysis is used to compare the performance between the two capacitors. The fabricated VCO occupied an area of 1 mm^2.This initial attempt at VCO fabrication did not produce a functional VCO, so the performance of the capacitors with the fabricated VCO could not be tested. However, the simulation results show that with this LIGA-MEMS capacitor, a 6.4 dB of phase noise improvement at 300 kHz offset from the carrier is possible in a CMOS-based VCO design.en_US
dc.language.isoen_USen_US
dc.subjectX-ray lithographyen_US
dc.subjectvaractoren_US
dc.subjectintegrationen_US
dc.subjectRFICen_US
dc.subjectquality factoren_US
dc.subjectphase noiseen_US
dc.titleInvestigation on LIGA-MEMS and on-chip CMOS capacitors for a VCO applicationen_US
thesis.degree.departmentElectrical Engineeringen_US
thesis.degree.disciplineElectrical Engineeringen_US
thesis.degree.grantorUniversity of Saskatchewanen_US
thesis.degree.levelMastersen_US
thesis.degree.nameMaster of Science (M.Sc.)en_US
dc.type.materialtexten_US
dc.type.genreThesisen_US


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