Modeling and analysis of thick suspended deep x-ray liga inductors on CMOS/BiCMOS substrate

Abstract

Modeling and simulation results for two types of 150 μm height air suspended inductors proposed for LIGA fabrication are presented. The inductor substrates used model the TSMC 0.18 μm CMOS/BiCMOS substrates. The RF performance between the suspended structure and the unsuspended counterpart are compared and the advantage of the suspended structures is explored. The potential of LIGA for fabricating high suspended inductors with good performance and for combining these with CMOS/BiCMOS is demonstrated.