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dc.contributor.advisorChang, Gap Sooen_US
dc.creatorBazylewski, Paul Francisen_US
dc.date.accessioned2011-08-25T13:10:22Zen_US
dc.date.accessioned2013-01-04T04:54:44Z
dc.date.available2012-09-06T08:00:00Zen_US
dc.date.available2013-01-04T04:54:44Z
dc.date.created2011en_US
dc.date.issued2011en_US
dc.date.submitted2011en_US
dc.identifier.urihttp://hdl.handle.net/10388/etd-08252011-131022en_US
dc.description.abstractPresented here is a study of the electronic properties and molecular stacking structure of four novel X-shaped anthracene based organic semiconductors utilizing near-edge X-ray absorption fine structure (NEXAFS) spectroscopy and density functional theory (DFT) calculations. These materials have been found to exhibit high charge carrier mobility when used in organic thin film transistors without an annealing step. Angle resolved NEXAFS show local molecular order through polarization dependence in C 1s → π* transitions, and that the plane of the anthracene core is oriented nearly normal to the plane of the substrate. DFT calculations were used examine electronic structure and the effects of molecular geometry, showing that the highest occupied molecular orbital (HOMO) conjugation extends to the thiophene end groups. The attachment of the thiophene end group is determined to modify intermolecular interaction, resulting in either a cofacial or herringbone structure. With the understanding of how these materials form an ordered crystal structure, future fabrication of new materials may be directed towards a preference for crystallization without annealing. A study with applications for organic photovoltaic devices was also undertaken to examine the thin film stacking structure of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). NEXAFS measurements show that the side chain lifts the energy degeneracy of the C60 molecular orbitals around the chain attachment. This breaks the spatial π -orbital symmetry of the lowest unoccupied molecular orbital (LUMO) of the C60 backbone which is observed through polarization dependence of π* transitions. The intensity dependence is further analyzed to determine the bulk crystal structure of PCBM.en_US
dc.language.isoen_USen_US
dc.subjectX-ray spectroscopyen_US
dc.subjectthin film deviceen_US
dc.subjectMaterials Scienceen_US
dc.subjectelectronic structureen_US
dc.subjectmolecular orientationen_US
dc.titleElectronic and thin film stacking structure of Organic Semiconductorsen_US
thesis.degree.departmentPhysics and Engineering Physicsen_US
thesis.degree.disciplinePhysics and Engineering Physicsen_US
thesis.degree.grantorUniversity of Saskatchewanen_US
thesis.degree.levelMastersen_US
thesis.degree.nameMaster of Science (M.Sc.)en_US
dc.type.materialtexten_US
dc.type.genreThesisen_US
dc.contributor.committeeMemberSmolyakov, Andreien_US
dc.contributor.committeeMemberMoewes, Alexen_US
dc.contributor.committeeMemberGhezelbash, Masouden_US
dc.contributor.committeeMemberKelly, Timen_US


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