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      • HARVEST
      • Electronic Theses and Dissertations
      • Graduate Theses and Dissertations
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      • HARVEST
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      Excess noise in n-type hydrogenated amorphous silicon

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      Date
      1997-01-01
      Author
      Scansen, Donald W.
      Type
      Thesis
      Degree Level
      Doctoral
      Metadata
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      Abstract
      Recently, there has been much uncertainty and controversy concerning various aspects of the behaviour of the excess noise in n-type a-Si:H known as 1/f or flicker noise. Conductance fluctuations have been measured in an n-type a-Si:H device. These fluctuations were measured for current densities in the range 0.1 $
      Degree
      Doctor of Philosophy (Ph.D.)
      Department
      Electrical Engineering
      Program
      Electrical Engineering
      Committee
      Kasap, Safa O.
      Copyright Date
      January 1997
      URI
      http://hdl.handle.net/10388/etd-10212004-000106
      Collections
      • Graduate Theses and Dissertations
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