Excess noise in n-type hydrogenated amorphous silicon

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Date
1997-01-01Author
Scansen, Donald W.
Type
ThesisDegree Level
DoctoralMetadata
Show full item recordAbstract
Recently, there has been much uncertainty and controversy concerning various aspects of the behaviour of the excess noise in n-type a-Si:H known as 1/f or flicker noise. Conductance fluctuations have been measured in an n-type a-Si:H device. These fluctuations were measured for current densities in the range 0.1 $