Excess noise in n-type hydrogenated amorphous silicon
Scansen, Donald W.
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Recently, there has been much uncertainty and controversy concerning various aspects of the behaviour of the excess noise in n-type a-Si:H known as 1/f or flicker noise. Conductance fluctuations have been measured in an n-type a-Si:H device. These fluctuations were measured for current densities in the range 0.1 $