Excess noise in n-type hydrogenated amorphous silicon

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Date
1997-01-01
Author
Scansen, Donald W.
Type
Thesis
Degree Level
Doctoral
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Abstract
Recently, there has been much uncertainty and controversy concerning various aspects of the behaviour of the excess noise in n-type a-Si:H known as 1/f or flicker noise. Conductance fluctuations have been measured in an n-type a-Si:H device. These fluctuations were measured for current densities in the range 0.1 $
Degree
Doctor of Philosophy (Ph.D.)
Department
Electrical Engineering
Program
Electrical Engineering
Committee
Kasap, Safa O.
Copyright Date
January 1997
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