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A STUDY OF SWITCHING PHENOMENA IN DISCONTINUOUS AU AND TI FILMS

dc.contributor.advisorDey, S. K.
dc.creatorDick, Gordon David
dc.date.accessioned2024-09-16T16:13:47Z
dc.date.available2024-09-16T16:13:47Z
dc.date.issued1976-09
dc.date.submittedSeptember 1976
dc.description.abstractIn recent years, a large number of materials have been reported to exhibit memory and threshold switching properties. Presently, researchers are concentrating on the amorphous semiconductors. However, switching properties have been reported in discontinuous thin metal films, and this thesis reports on results for discontinuous gold and discontinuous titanium. Due to apparent similarities in the operation of amorphous semiconductor devices and discontinuous metal devices, some of the more widely accepted switching theories for amorphous devices are briefly discussed with the intent of providing a comprehensive background to the model for discontinuous devices to be presented in this thesis. Experimental investigations into the switching properties of discontinuous gold devices, revealed two previously unreported switching phenomena: memory switching and double threshold memory switching. Since it was not possible to apply switching theory from amorphous devices, a qualitative theory is presented to explain both memory switching and double threshold memory switching, which is supported experimentally.
dc.identifier.urihttps://hdl.handle.net/10388/16021
dc.titleA STUDY OF SWITCHING PHENOMENA IN DISCONTINUOUS AU AND TI FILMS
dc.type.genreThesis
thesis.degree.departmentElectrical Engineering
thesis.degree.grantorUniversity of Saskatchewanen_US
thesis.degree.levelMasters
thesis.degree.nameMaster of Science (M.Sc.)

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