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HIGH INPUT IMPEDANCE AMPLIFIERS USING FIELD-EFFECT TRANSISTORS

dc.contributor.advisorHolmlund, B. A.
dc.creatorShiels, Thomas William
dc.date.accessioned2024-08-14T21:43:50Z
dc.date.available2024-08-14T21:43:50Z
dc.date.issued1963-10
dc.date.submittedOctober 1963
dc.description.abstractThis thesis presents a qualitative discussion on the field-effect transistor and its operation. A smell signal equivalent circuit and the measurement technique used to determine its parameters ars presented. The variation of these parameters as a function of frequency, bias and temperature is presented for two Crystalonics C 614 field-effect transistors. Three high input impedance techniques discussed aces source fol-lower, bootstrapping and capacitance neutralization. Based on these techniques three high Input impedance amplifiers using field-effect transistors are designed and analyzed.
dc.identifier.urihttps://hdl.handle.net/10388/15906
dc.titleHIGH INPUT IMPEDANCE AMPLIFIERS USING FIELD-EFFECT TRANSISTORS
dc.type.genreThesis
thesis.degree.departmentElectrical Engineering
thesis.degree.grantorUniversity of Saskatchewanen_US
thesis.degree.levelMasters
thesis.degree.nameMaster of Science (M.Sc.)

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