THE CADMIUM SELENIDE THIN-FILM TRANSISTOR
Date
1966-12
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
ORCID
Type
Degree Level
Masters
Abstract
A. study of the properties of polycrystalline cadmium selenide semiconductor films has been undertaken as a part of the overall thin-film transistor research program in effect in the Department of Electrical Engineering at the University of Saskatchewan. The semiconductor has been considered throughout as a thin-film transistor component rather than a separate entity.
The properties of polycrystalline semiconductors in general are discussed utilizing comparison with the more familiar properties of single-crystal semiconductors. Specific properties of cadmium selenide are presented in detail. The most important characteristics of the silicon monoxide thin-film transistor insulator are mentioned. The conduction process in thin-film transistors is described including analysis of an incremental thin-film transistor section and of the entire device. Two small-signal equivalent circuits are included. The results of an investigation of the structure of polycrystalline cadmium selenide films by X-ray techniques are described. Important parameters of polycrystalline cadmium selenide films are determined from experimental results. Parameters for which a value is obtained are bulk semiconductor conductivity, bulk free electron concentration, effective
electron mobility, surface density of interface traps, conduction channel thickness, and Fermi energy. Assumptions made, sources of error, and accuracy of values obtained are discussed.
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Citation
Degree
Master of Science (M.Sc.)
Department
Electrical Engineering