Microwave plasma CVD Synthesis of Diamond NV Centers: An investigation of the role of Nitrogen doping time in Nitrogen Vacancy Synthesis
Date
2024-11-01
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
ORCID
Type
Thesis
Degree Level
Masters
Abstract
The magnetic-field-dependent fluorescence properties of NV− center defects embedded
within a diamond matrix have made them a candidate for solid state qubits for quantum
computing as well as magnetic field sensing. Microwave plasma assisted chemical vapor
deposition (MPCVD) of diamond with in situ nitrogen doping has provided reproducibility
and uniformity in the production of NV− centers on multiple substrates. What has yet
to be understood is the impact of the nitrogen doping time on the MPCVD process and
its impact on the creation of NV− centers. Analysis of the NV−-containing diamond films
has been carried out using Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD),
Raman spectroscopy, photoluminescence spectroscopy, and optical microscopy. In addition,
calculated plasma parameters and models have been used to quantify the properties of the
MPCVD process.This study aims to investigate the effect of nitrogen doping time and its
effect on the produced spectral lines associated with the 1333 cm−1 Diamond Raman spectra
peak, 637 nm photoluminescence NV− spectral peak, and the (111) and (220) diamond
XRD peaks. This investigation aims to quantify a relationship between spectral peaks, NV−
density, and nitrogen doping time in terms of MPCVD process parameters.
Description
Keywords
microwave, plasma, cvd, diamond, nitrogen, vacancy, deposition, thin-film, spectroscopy,
Citation
Degree
Master of Science (M.Sc.)
Department
Physics and Engineering Physics
Program
Physics