Repository logo
 

A new highly stable multifunctional two-dimensional Si2BN monolayer quantum material with a direct bandgap predicted by density functional theory

dc.contributor.authorDjamel, Bezzerga
dc.contributor.authorChelil, Naouel
dc.contributor.authorMohammed, Sahnoun
dc.contributor.authorGusarov, Sergey
dc.contributor.authorChang, Gap Soo
dc.contributor.authorNaseri, Mosayeb
dc.date.accessioned2024-08-22T22:26:49Z
dc.date.available2024-08-22T22:26:49Z
dc.date.issued2024-07
dc.descriptionPublished article: https://doi.org/10.1039/D4CP01445F
dc.description.abstractIn this work, we present a novel two-dimensional (2D) Si2BN structure (2D δ-Si2BN) predicted using density functional theory (DFT). The proposed structure exhibits a unique double quasi-planar layer interconnected by covalent bonds, demonstrating lower energy compared to the previously reported planar Si2BN nanosheet. Our calculations, conducted at the HSE06 level of theory, reveal its semiconductor nature with a direct band gap of 1.24 eV at the gamma point. The 2D material exhibits exceptional light absorption in the visible region, prompting an exploration of its potential in photovoltaic applications. Remarkably, our findings indicate a maximum theoretical efficiency of 27.6%, underscoring its promise for renewable energy technologies. Furthermore, employing modern polarization theory, we unveil the ferroelectric properties of the Si2BN monolayer. Notably, a large out-of-plane polarization is observed. It was found that the unstrained 2D δ-Si2BN monolayer demonstrates an impressive out-of-plane spontaneous electric polarization of 28.98 × 10−10 C m−1, a value six times greater than previously referenced Janus materials. This remarkable enhancement in ferroelectric capabilities positions the Si2BN monolayer as a promising candidate for applications in next generation novel information storage, nano-electronic, and optoelectronic devices. These findings not only contribute to the understanding of the structural and electronic properties of the 2D δ-Si2BN monolayer but also highlight its potential for various technological applications, marking a significant advancement in the field of nanomaterials.
dc.description.sponsorshipNational Research Council of Canada, Artificial Intelligence for Design program, by the Natural Sciences and Engineering Research Council of Canada, Discovery Grant (RGPIN-2019-03976) and by Compute Canada (now the Digital Research Alliance of Canada).
dc.description.versionPeer Reviewed
dc.identifier.citationDjamel, B., Chelil, N., Mohammed, S., Gusarov, S., Chang, G. S., & Naseri, M. (2024). A new highly stable multifunctional two-dimensional Si2BN monolayer quantum material with a direct bandgap predicted by density functional theory. Physical Chemistry Chemical Physics, 26(30), 20610–20618. https://doi.org/10.1039/D4CP01445F
dc.identifier.doi10.1039/D4CP01445F
dc.identifier.urihttps://hdl.handle.net/10388/15925
dc.language.isoen
dc.publisherRoyal Society of Chemistry [Society Publisher]
dc.subjectSi2BN
dc.subject2D materials
dc.subjectElectronic properties
dc.subjectSolar Cell
dc.subjectferroelectric materials
dc.subjectdensity functional theory
dc.titleA new highly stable multifunctional two-dimensional Si2BN monolayer quantum material with a direct bandgap predicted by density functional theory
dc.typeArticle

Files

Original bundle
Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
Si2BN_final-version-Revised.pdf
Size:
1.61 MB
Format:
Adobe Portable Document Format
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
2.36 KB
Format:
Item-specific license agreed upon to submission
Description: