Excess noise in n-type hydrogenated amorphous silicon
Date
1997-01-01
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ORCID
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Degree Level
Doctoral
Abstract
Recently, there has been much uncertainty and controversy concerning various aspects of the behaviour of the excess noise in n-type a-Si:H known as 1/f or flicker noise. Conductance fluctuations have been measured in an n-type a-Si:H device. These fluctuations were measured for current densities in the range 0.1 $
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Degree
Doctor of Philosophy (Ph.D.)
Department
Electrical Engineering
Program
Electrical Engineering