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Excess noise in n-type hydrogenated amorphous silicon

Date

1997-01-01

Journal Title

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Type

Degree Level

Doctoral

Abstract

Recently, there has been much uncertainty and controversy concerning various aspects of the behaviour of the excess noise in n-type a-Si:H known as 1/f or flicker noise. Conductance fluctuations have been measured in an n-type a-Si:H device. These fluctuations were measured for current densities in the range 0.1 $

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Citation

Degree

Doctor of Philosophy (Ph.D.)

Department

Electrical Engineering

Program

Electrical Engineering

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Citation

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