MEASUREMENTS OF TRANSISTOR PARAMETERS IN THE AVALANCHE NODE
Date
1960-08
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
ORCID
Type
Degree Level
Masters
Abstract
In early applications of junction transistors, the collector voltage was listed to values far below the junction breakdown voltage. The reason for this was associated with the imperfect properties of early transistors in which the surface leakage current across the collector junction far exceeded theoretical values. Many circuit designs are not tolerant to such leakage currents and it was necessary to restrict them by operating at low voltages.
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Citation
Degree
Master of Science (M.Sc.)
Department
Electrical Engineering