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RELIABILITY EVALUATION OF MICROELECTRONIC DEVICES

Date

1981-06

Journal Title

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Volume Title

Publisher

ORCID

Type

Degree Level

Masters

Abstract

The semiconductor device industry is approximately 30 years old. Since its inception, reliability, speed of operation and production yields have steadily improved while cost, power consumption and size have been reduced drastically. This is particularly true for both bipolar transistors and metal oxide semiconductor field effect transistors (MOSFETs). There is very little standardization in the integrated circuit (IC) industry regarding materials and technologies used due to a continuing emphasis on the device reliability, complexity and miniaturization. The activity in regard to the reliability of semiconductor discrete devices has largely saturated while the activity in the area of microelectronic devices is continuing to accelerate due to the dynamic nature of microelectronic device technology. Microelectronic devices are usually extremely complicated and therefore their evaluation should be considered as a separate area which warrants a sophisticated reliability evaluation program. The most important aspects to be considered are the failure modes and failure mechanisms, burn—in and accelerated life testing, failure distributions, activation energy and acceleration factors and their applications in failure rate prediction and sample size estimation and failure analysis techniques. This thesis presents (1) the basic theory and techniques for reliability evaluation of microelectronic devices and an examination of the practical work done by industries like RCA, Intel, Harris, Bell—Laboratories, Bell Telephone Laboratories, Texas instruments etc., and based on these findings, (2) a total reliability evaluation program for 4K CMOS static memory devices and (3) a cost analysis and reliability facility plan.

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Citation

Degree

Master of Science (M.Sc.)

Department

Electrical Engineering

Program

Committee

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