Trofimenkoff, F. N.2019-01-232019-01-231963-11November 1http://hdl.handle.net/10388/11796D. C. characteristics of the field-effect transistor are discussed and previous theory is modified to provide better agreement with field-effect transistors constructed by modern methods. A physical equivalent circuit is presented, which describes the operation of the FET up to several hundred megacycles. Techniques of measurement of the fourpole admittances of the device are described, and components of the equivalent circuit are calculated from experimental data. The response of the small signal equivalent circuit to various switching waveforms is computed as a preliminary step in the analysis of the FET in the switching mode.Thesis