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Statistics for Monte Carlo Simulation of Time of Flight Transient Photocurrents in High Resistivity Semiconductors with Shallow and Deep Traps: Effects of Photoinjection Strength, Duration and Absorption Depth

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Monte Carlo Simulation of Time of Flight Transient Photocurrents in High Resistivity Semiconductors with Shallow and Deep Traps: Effects of Photoinjection Strength, Duration and Absorption Depth 10

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BALLENDINE-THESIS-2011.pdf 48

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