Single Event Evaluation on 28nm Fully Depleted Silicon-On-Insulator SRAM and Commercial Solid-State Drives
MetadataShow full item record
This thesis is under an embargo.
Access to the abstract and all associated documents will not be permitted until 2022-06-05.
DegreeMaster of Science (M.Sc.)
DepartmentElectrical and Computer Engineering
CommitteeKo, Seok-Bum; Gokaraju, Rama; Chen, Daniel
Copyright DateMay 2020
Single event effect
single event upset
28nm FD SOI