A SMALL-SIGNAL HIGH FREQUENCY EQUIVALENT OIRCUIT FOR THE FIELD-EFFECT TRANSISTOR
The field effect transistor is considered as an active, distributed non-uni.form transmission line and a differential equation for the small-signal a.c. case is derived. The short-circuit admittance parameters of the device are determined from the solution of the differential equation. A high frequency equivalent circuit for the intrinsic device is then obtained from the first-order approximation of the analysis and the expressions for the elements of this circuit are derived for both the saturated and the non-saturated conditions. The normalized values of these elements are computed as functions of the gate and drain bias voltages and the results of these computations are presented graphically.
Master of Science (M.Sc.)
Electrical and Computer Engineering