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Silicon 1s Near Edge X-ray Absorption Fine Structure Spectroscopy of Functionalized Silicon Nanocrystals

dc.contributor.authorRitchie, Andrew
dc.contributor.authorCao, Wei
dc.contributor.authorDasog, Mita
dc.contributor.authorPurkait, T.K.
dc.contributor.authorSenger, Curtis
dc.contributor.authorHU, Yongfeng
dc.contributor.authorXiao, Q.F.
dc.contributor.authorVeinot, Jon
dc.contributor.authorUrquhart, Stephen
dc.contributor.authorUrquhart, Stephen
dc.date.accessioned2020-01-03T22:50:51Z
dc.date.available2020-01-03T22:50:51Z
dc.date.issued2016
dc.description.abstractSilicon 1s Near Edge X-ray Absorption Fine Structure (NEXAFS) spectra of silicon nanocrystals have been examined as a function of nanocrystal size (3 – 100 nm), varying surface functionalization (hydrogen or 1-pentyl termination), or embedded in oxide. The NEXAFS spectra are characterized as a function of nanocrystal size and surface functionalization. Clear spectroscopic evidence for long range order is observed Si-NCs that are 5-8 nm in diameter or larger. Energy shifts in the silicon 1s NEXAFS spectra of covalently functionalized silicon nanocrystals with changing size are attributed to surface chemical shifts and not to quantum confinement effects.en_US
dc.description.sponsorshipNSERCen_US
dc.description.versionPeer Revieweden_US
dc.identifier.citationA. Ritchie, W. Cao, M. Dasog, T.K. Purkait, C. Senger, Y.F. Hu, Q.F. Xiao, J.G.C. Veinot and S.G. Urquhart, 2016. Silicon 1s near edge X-ray absorption fine structure spectroscopy of functionalized silicon nanocrystals.The Journal of Chemical Physics, 145, 154703.en_US
dc.identifier.doi10.1063/1.4964371
dc.identifier.urihttp://hdl.handle.net/10388/12504
dc.language.isoenen_US
dc.publisherAmerican Chemical Societyen_US
dc.titleSilicon 1s Near Edge X-ray Absorption Fine Structure Spectroscopy of Functionalized Silicon Nanocrystalsen_US
dc.typeArticleen_US

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