X-ray Induced Changes in Electronic Properties of Stabilized Amorphous Selenium Based Photoconductors
dc.contributor.committeeMember | Kasap, Safa O | |
dc.contributor.committeeMember | Bradley, Michael P | |
dc.contributor.committeeMember | Bui, Francis M | |
dc.contributor.committeeMember | Chen, Li | |
dc.contributor.committeeMember | Yang, Qiaoqin | |
dc.creator | Yang, Junyi | |
dc.date.accessioned | 2016-07-07T20:36:25Z | |
dc.date.available | 2017-11-27T16:31:59Z | |
dc.date.created | 2016-08 | |
dc.date.issued | 2016-07-07 | |
dc.date.submitted | August 2016 | |
dc.date.updated | 2016-07-07T20:36:25Z | |
dc.description.abstract | Amorphous selenium and its alloy are important materials for flat panel digital X-ray detectors. The performance of the X-ray detector is directly related to the carrier mobility and carrier-trapping lifetime of amorphous selenium and its alloy. An experiment was conducted to examine the dose rate effects on the carrier-trapping lifetime reduction of amorphous selenium alloy due to X-ray irradiation. In addition, an experiment was conducted to investigate the temperature effects on X-ray induced carrier-trapping lifetime decrease and relaxation process. X-ray induced capacitance changes have been investigated as well. The interrupted field time of flight (IFTOF) techniques are used in order to acquire the carrier-trapping lifetime. Several amorphous selenium alloy films are irradiated under X-ray. The composition of films are a-Se: 0.3% As: 5ppm Cl and the thickness of the films are about 150 μm. Different dose rates, which range from 0.2 Gy/s up to 2 Gy/s, are applied during the irradiation. The experiments are done for both electrons and holes. The dose rate difference does not result in a significant change in the X-ray induced carrier-trapping lifetime decrease. The same set of samples is studied under three different temperatures, 10 ℃, 23.5 ℃ and 35.5 ℃. The X-ray induced hole-trapping lifetime changes at different temperatures are investigated. After irradiation, the hole-trapping lifetime begins to recovery gradually. The temperature during the relaxation process remains unchanged. The change of hole-trapping lifetime is measured by IFTOF measurement. At higher temperature, upon receiving a certain amount of X-ray dose, the hole-trapping lifetime decreases more than it at lower temperature; however, it also recoveries more quickly at higher temperature. The relaxation process at different temperature also gives activation energy for holes. The X-ray irradiation does not result in any capacitance changes for a-Se films. | |
dc.format.mimetype | application/pdf | |
dc.identifier.uri | http://hdl.handle.net/10388/7331 | |
dc.subject | Amorphous Selenium | |
dc.subject | X-ray | |
dc.title | X-ray Induced Changes in Electronic Properties of Stabilized Amorphous Selenium Based Photoconductors | |
dc.type | Thesis | |
dc.type.material | text | |
local.embargo.terms | 2017-07-07 | |
thesis.degree.department | Biomedical Engineering | |
thesis.degree.discipline | Biomedical Engineering | |
thesis.degree.grantor | University of Saskatchewan | |
thesis.degree.level | Masters | |
thesis.degree.name | Master of Science (M.Sc.) |