A SMALL-SIGNAL HIGH FREQUENCY EQUIVALENT CIRCUIT FOR THE FIELD-EFFECT TRANSISTOR
| dc.contributor.advisor | Trofimenkoff, F. N. | |
| dc.creator | Reddy, Bhaskara | |
| dc.date.accessioned | 2019-01-23T16:18:07Z | |
| dc.date.available | 2019-01-23T16:18:07Z | |
| dc.date.issued | 1965-05 | |
| dc.date.submitted | May 1965 | en_US |
| dc.description.abstract | The field effect transistor is considered as an active, distributed non-uniform transmission line and a differential equation fore the small-signal a.c. case is derived. The short-circuit admittance parameters of the device are determined from the solution of differential equation. A high frequency equivalent circuit for the intrinsic device is then obtained from the first-order approximation of the analysis and the expressions for the elements of this circuit are derived for both the saturated and the non-saturated conditions. The normalized values of these elements are computed as functions of the gate and drain bias voltages and the results of these computations are presented graphically. | en_US |
| dc.identifier.uri | http://hdl.handle.net/10388/11778 | |
| dc.title | A SMALL-SIGNAL HIGH FREQUENCY EQUIVALENT CIRCUIT FOR THE FIELD-EFFECT TRANSISTOR | en_US |
| dc.type.genre | Thesis | en_US |
| thesis.degree.department | Electrical and Computer Engineering | en_US |
| thesis.degree.discipline | Electrical Engineering | en_US |
| thesis.degree.grantor | University of Saskatchewan | en_US |
| thesis.degree.level | Masters | en_US |
| thesis.degree.name | Master of Science (M.Sc.) | en_US |