A SMALL-SIGNAL HIGH FREQUENCY EQUIVALENT CIRCUIT FOR THE FIELD-EFFECT TRANSISTOR
|Trofimenkoff, F. N.
|The field effect transistor is considered as an active, distributed non-uniform transmission line and a differential equation fore the small-signal a.c. case is derived. The short-circuit admittance parameters of the device are determined from the solution of differential equation. A high frequency equivalent circuit for the intrinsic device is then obtained from the first-order approximation of the analysis and the expressions for the elements of this circuit are derived for both the saturated and the non-saturated conditions. The normalized values of these elements are computed as functions of the gate and drain bias voltages and the results of these computations are presented graphically.
|A SMALL-SIGNAL HIGH FREQUENCY EQUIVALENT CIRCUIT FOR THE FIELD-EFFECT TRANSISTOR
|Electrical and Computer Engineering
|University of Saskatchewan
|Master of Science (M.Sc.)